ICSCRM2019

講演情報

印刷

Oral Presentation

Growth and Wafer Manufacturing

[Th-2B] Alternative Bulk Growth

2019年10月3日(木) 10:45 〜 12:15 Annex Hall 2 (Kyoto International Conference Center)

11:15 〜 11:30

[Th-2B-02] Changes in dislocation densities in 4H-SiC bulk crystals obtained by gas source method at a high growth rate

*Norihiro Hoshino1, Isaho Kamata1, Takahiro Kanda3, Yuichiro Tokuda3, Naohiro Sugiyama2,3, Hironari Kuno3, Hidekazu Tsuchida1 (1. CRIEPI(Japan), 2. AIST(Japan), 3. DENSO CORP.(Japan))