スケジュール 7 11:30 〜 11:45 [Th-2B-03] Application of high-quality SiC solution growth to large size crystal *Can Zhu1, Tomoki Endo1, Takama Unno1, Haruhiko Koizumi1, Shunta Harada1, Miho Tagawa1, Toru Ujihara1,2 (1. Nagoya Univ.(Japan), 2. National Inst.of Advanced Indus. Sci. and Tech.(Japan))