Schedule 3 1:45 PM - 3:45 PM [IP-04(Invited)] Electrical Parameters Degradations of p-GaN HEMTs under Repetitive UIS Stress *Sheng Li1, Siyang Liu1, Chi Zhang1, Jiaxing Wei1, Weifeng Sun1, Yiheng Li2, Zhichao Yang2 (1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))