Schedule 2 1:45 PM - 3:45 PM [Th-P-23] Gate Leakage Current of SiO2/4H-SiC Metal-Oxide-Semiconductor Using Poole-Frenkel Emission Hojun Lee1, Taeeun Kim1, Jeong Hyun Moon2, Ogyun Seok2, Wook Bahng2, *Min-Woo Ha1 (1. Myongji Univ.(Korea), 2. Korea Electrotech. Res. Institute(Korea))
