1:45 PM - 3:45 PM

[IP-01(Invited)] SiC epitaxial reactor cleaning by ClF₃ gas with the help of reaction heat

Keisuke Kurashima¹, Masaya Hayashi¹, *Hitoshi Habuka¹, Hideki Ito², Shin-ichi Mitani², Yoshinao Takahashi³ (1. Yokohama National University(Japan), 2. NuFlare Technology, Inc(Japan), 3. KANTO DENKA KOGYO CO., LTD(Japan))

1:45 PM - 3:45 PM

[IP-02(Invited)] Silicon vacancy related defects in 4H SiC for quantum technology

*Andras Csore¹, Nguyen Tien Son², Ivan Gueorguiev Ivanov², Adam Gali^1,3 (1. Budapest Univ. of Tech. and Economics(Hungary), 2. Linköping Univ.(Sweden), 3. Wigner Res. Centre for Physics, HAS(Hungary))

1:45 PM - 3:45 PM

[IP-03(Invited)] Evaluation of the influence of Al⁺ implantation on the forward degradation of SiC bipolar devices

*teruaki kumazawa^1,2, Masakazu Baba², Yusuke Yamashiro², Mariko Hayashi^2,3, Manabu Takei^2,4, Kimimori Hamada¹, Shinsuke Harada², Yoshiyuki Yonezawa², Hajime Okumura² (1. Toyota Motor Corp.(Japan), 2. National Institute of Advanced Industrial Sience and Technology(AIST)(Japan), 3. DENSO CORP.(Japan), 4. Fuji Electric Co., Ltd.(Japan))

1:45 PM - 3:45 PM

[IP-04(Invited)] Electrical Parameters Degradations of p-GaN HEMTs under Repetitive UIS Stress

*Sheng Li¹, Siyang Liu¹, Chi Zhang¹, Jiaxing Wei¹, Weifeng Sun¹, Yiheng Li², Zhichao Yang² (1. Southeast Univ.(China), 2. CorEnergy Semiconductor Corp. Ltd. (China))

1:45 PM - 3:45 PM

[Th-P-01] Modified hot-zone design of growth cell for reducing the warpage of 6”-SiC wafer

*Byung-Kyu Jang¹, Jonghwi Park¹, Jung-Woo Choi¹, Eunsu Yang¹, Jung-Gyu Kim¹, Sang-Ki Ko¹, Myung-Ok Kyun¹, Kap-Ryeol Ku¹, Yeon-Suk Jang², WON JAE LEE^1,2 (1. SKC(Korea), 2. Dongeui Univ.(Korea))

1:45 PM - 3:45 PM

[Th-P-02] Effect of Al Addition on Surface Morphology in Solution Growth of SiC Using Cr Solvent without Molten Si

*Koki Suzuki¹, Toshinori Taishi¹ (1. Shinshu Univ.(Japan))

Cancelled

1:45 PM - 3:45 PM

[Th-P-03] Withdrawn

1:45 PM - 3:45 PM

[Th-P-04] Investigation on the treading dislocations formed by lattice misfits during initial stage of sublimation growth of 4H-SiC

*Tai Hee Eun¹, Im-Gyu Yeo¹, Jang-Yul Kim¹, Seung-Seok Lee¹, Han-Suk Seo¹, Myong-Chuel Chun¹ (1. RIST (Research Institute of Industrial Science and Technology)(Korea))

Cancelled

1:45 PM - 3:45 PM

[Th-P-05] Withdrawn

1:45 PM - 3:45 PM

[Th-P-06] Improvement of repeatability on N-type 4H-SiC epitaxial growth by high speed wafer rotation vertical CVD tool

*Yoshiaki Daigo¹, Akio Ishiguro¹, Shigeaki Ishii¹, Takehiko Kobayashi¹, Yoshikazu Moriyama¹ (1. NuFlare Technology, Inc.,(Japan))

1:45 PM - 3:45 PM

[Th-P-07] Resistive heater element made of highly durable TaC-coated graphite for high-temperature and highly corrosive processes: Application to MOCVD GaN epitaxial growth

*Daisuke Nakamura¹, Tetsuo Narita¹, Taishi Kimura¹ (1. Toyota central R&D labs., inc.(Japan))

1:45 PM - 3:45 PM

[Th-P-08] A New Permanganate-Free Slurry for GaN-SiC CMP Applications

*Treliant Fang¹, Ping-Chung Chen², Ming-Hsun Lee² (1. Flux Research Institute, LLC(United States of America), 2. Scientech Corp., Ltd.(Taiwan))

1:45 PM - 3:45 PM

[Th-P-09] Evolution and Future Direction of SiC Substrate Processing

*Rob Rhoades¹, Sarah Okada¹ (1. Revasum(United States of America))

Cancelled

1:45 PM - 3:45 PM

[Th-P-10] Withdrawn

1:45 PM - 3:45 PM

[Th-P-11] Characterization of Prismatic Stacking Faults of Carrot Defects in 4H-SiC Epi Wafer

*Hideki Sako^1,3, Kenji Kobayashi², Kentaro Ohira³, Toshiyuki Isshiki³ (1. Toray Research Center, Inc.(Japan), 2. Hitachi High-Technologies Corp.(Japan), 3. Kyoto Institute of Technology(Japan))

1:45 PM - 3:45 PM

[Th-P-12] Defect Characterization in 100 mm commercial 4H-SiC Substrate and Homoepitaxial Wafer

*Long Yang^1,2, Lixia Zhao^1,2, Huiwang Wu^1,2, Yafei Liu³, Balaji Raghothamachar³, Michael Dudley³ (1. Hebei Key Lab. of New Semiconductor Materials(China), 2. Hebei Poshing Electronics Tech. Corp. Ltd.(China), 3. Stony Brook Univ.(United States of America))

Cancelled

1:45 PM - 3:45 PM

[Th-P-13] Withdrawn

1:45 PM - 3:45 PM

[Th-P-14] Verification of Forward Degradation in PiN Diode Using Free-Standing 4H-SiC Epitaxial Layers

*Yusuke Miyata¹, Hiroaki Okabe¹, Tomoaki Furusho¹, Kazuya Konishi¹, Kenji Hamada¹, Hiroshi Watanabe¹, Shingo Tomohisa¹, Naruhisa Miura¹ (1. Mitsubishi Electric Corp.(Japan))

1:45 PM - 3:45 PM

[Th-P-15] Evaluation of suppressing forward voltage degradation by using a low BPD density substrate or an epitaxial wafer with an HNDE

*Yoshitaka Nishihara¹, Koji Kamei¹, Kenji Momose¹, Hiroshi Osawa¹ (1. SHOWA DENKO K.K.(Japan))

1:45 PM - 3:45 PM

[Th-P-16] Defect Detection in SiC Device Processes using a Mirror Electron Microscope Inspection System

*Keiko Masumoto¹, Junji Senzaki¹, Masaki Hasegawa², Kentaro Ohira², Kazutoshi Kojima¹, Kenji Kobayashi², Hajime Okumura¹ (1. National Inst. of Advanced Indus. Sci. and Tech.(Japan), 2. Hitachi High-Technologies Corp.(Japan))

1:45 PM - 3:45 PM

[Th-P-17] Evaluations of p-Type 4H-SiC Piezoresistance Coefficients in (0001) Plane Using Numerical Simulation

*Takaya Sugiura¹, Naoki Takahashi¹, Nobuhiko Nakano¹ (1. Keio Univ.(Japan))

Cancelled

1:45 PM - 3:45 PM

[Th-P-18] Withdrawn

1:45 PM - 3:45 PM

[Th-P-19] Comparative results of low-temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electrons

Vitali V. Kozlovski¹, Oleg Korolkov², Alexander A. Lebedev³, Jana Toompuu², *Natalja Sleptsuk² (1. Peter the Great St. Petersburg Polytechnic University(Russia), 2. Tallinn University of Technology(Estonia), 3. Ioffe Institute(Russia))

1:45 PM - 3:45 PM

[Th-P-20] Investigation of the influence of structural defects on the PL spectra in n-3C-SiC.

*Aleksandr A Lebedev¹, Lev V Shakhov¹, Natalia V Seredova ¹, Sergey P Lebedev¹, Irina P Nikitina¹ (1. Ioffe Institute(Russia))

1:45 PM - 3:45 PM

[Th-P-21] Wurtzite SiC Formation in Plastic Deformed 3C and 6H

*Joerg Pezoldt¹, Andrei A. Kalnin² (1. TU Ilmenau(Germany), 2. Saint Petersburg State Electrotechnical University(Russia))

1:45 PM - 3:45 PM

[Th-P-22] Current-Mode Deep Level Spectroscopy of Vanadium-doped HPSI 4H-SiC

*Giovanni Alfieri¹, Lukas Kranz¹, Andrei Mihaila¹ (1. ABB(Switzerland))

1:45 PM - 3:45 PM

[Th-P-23] Gate Leakage Current of SiO₂/4H-SiC Metal-Oxide-Semiconductor Using Poole-Frenkel Emission

Hojun Lee¹, Taeeun Kim¹, Jeong Hyun Moon², Ogyun Seok², Wook Bahng², *Min-Woo Ha¹ (1. Myongji Univ.(Korea), 2. Korea Electrotech. Res. Institute(Korea))

1:45 PM - 3:45 PM

[Th-P-24] Evaluation of Interface Traps Type, Energy Level and Density by C-V Measurements for Calibrated SiC MOSFET TCAD Simulations

Ilaria Matacena¹, *Luca Maresca¹, Michele Riccio¹, Andrea Irace¹, Giovanni Breglio¹, Santolo Daliento¹ (1. University of Naples "Federico II"(Italy))

1:45 PM - 3:45 PM

[Th-P-25] Photo-assisted Corona-charge Characterization of Wide Bandgap Interfaces with Deep Traps Invisible in Standard C-V

*Alexandre Savtchouk¹, Marshall Wilson¹, John D'Amico¹, Carlos Almeida¹, Andrew Hoff², Jacek Lagowski¹ (1. Semilab SDI(United States of America), 2. Electrical Engineering Department, University of South Florida(United States of America))

1:45 PM - 3:45 PM

[Th-P-26] Near zero field spin dependent charge pumping: effects of nitrogen in 4H-SiC MOSFETs

*Mark Anders¹, Patrick M Lenahan², Jason T Ryan¹ (1. National Institute of Standards and Technology(United States of America), 2. Pennsylvania State University(United States of America))

1:45 PM - 3:45 PM

[Th-P-27] Formation and crystallinity evaluation of periodic nanostructures on SiC induced by ultra-short laser pulse

*Reina Miyagawa¹, Shusuke Yoshikawa¹, Hwan Hong Lim², Takunori Taira^2,3, Osamu Eryu¹ (1. Nagoya Inst. of Tech.(Japan), 2. Inst. of Mol. Sci.(Japan), 3. RIKEN SPring-8(Japan))

1:45 PM - 3:45 PM

[Th-P-28] Improvement of surface morphology and state density of 4H-SiC using reduced-graphene oxide (r-GO) as a capping layer

*Seongjun Kim¹, Minwho Lim², Hong-Ki Kim¹, Min-Je Sung¹, Min-Jae Kang¹, Hahye Choi¹, Nam-Suk Lee¹, Tobias Erlbacher², Anton Bauer², Hoon-Kyu Shin¹ (1. Pohang Univ. of Sci. and Tech.(Korea), 2. Fraunhofer Inst. for Integrated Systems and Device Tech. (IISB)(Germany))

Cancelled

1:45 PM - 3:45 PM

[Th-P-29] Withdrawn

1:45 PM - 3:45 PM

[Th-P-30] Pixel Array Integration with SOI-Si photodiode and 4H-SiC MOSFETs for Radiation-Hardened image sensors

*Tatsuya Meguro¹, Fumiaki Hasebe¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³, Shin-Ichiro Kuroki¹ (1. Hiroshima Univ.(Japan), 2. National Institutes for Quantum and Radiological Science and Technology (QST)(Japan), 3. National Institute of Advanced Industrial Science and Technology (AIST)(Japan))

1:45 PM - 3:45 PM

[Th-P-31] Effect of phosphorus doped poly annealing on threshold voltage stability and thermal oxide reliability in 4H-SiC MOSFET

*Kwangwon Lee¹, Youngho Seo¹, Taeseop Lee¹, Kyeongseok Park¹, Martin Domeij², Fredrik Allerstam², Thomas Neyer³ (1. ON semiconductor(Korea), 2. ON semiconductor (Sweden), 3. ON semiconductor (Germany))

1:45 PM - 3:45 PM

[Th-P-32] Rapid Growth of SiO₂ on SiC with Atomically Flat Interface and Low D_it using High Pressure Microwave Oxygen Plasma

*Shengkai Wang^1,2, Jilong Hao^1,2, Nannan You^1,2, Yun Bai^1,2, Xinyu Liu^1,2 (1. Inst. of Microelectronics of Chinese Academy of Sciences(China), 2. Univ. of Chinese Academy of Sciences(China))

1:45 PM - 3:45 PM

[Th-P-33] Interface Engineering of SiC MOS Devices by High-temperature CO₂ Treatment

*Takuji Hosoi¹, Momoe Ohsako¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1. Osaka University(Japan))

1:45 PM - 3:45 PM

[Th-P-34] Advanced TCAD Design Techniques for the Performance Improvement of SiC MOSFETs

*Marco Bellini¹, Lars Knoll¹ (1. ABB Switzerland Ltd, Corporate Research Center(Switzerland))

1:45 PM - 3:45 PM

[Th-P-35] 1.2 kV SiC trench MOSFETs with double p-base junctions

*Ogyun Seok¹, In Ho Kang¹, Hyoung Woo Kim¹, Jeong Hyun Moon¹, Moonkyong Na¹, Sangcheol Kim¹, Nam Kyun Kim¹, Young Jo Kim¹, Hyun Jin Jung¹, Wook Bahng¹ (1. Korea Electrotechnology Research Institute(Korea))

1:45 PM - 3:45 PM

[Th-P-36] Analysis of the static characteristics of 4H-SiC Trench MOSFET with novel trench bottom structure

*Hyoung Woo Kim¹, Ogyun Seok¹, Jeong Hyun Moon¹, Wook Bahng¹ (1. Korea Electrotechnology Research Institute(Korea))

1:45 PM - 3:45 PM

[Th-P-37] Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs

*Xiao Chuan Deng¹, Hao Zhu¹, Xuan Li¹, Xiao Jie Xu¹, Kun Zhou², Zhi Qiang Li², Bo Song³, You Run Zhang¹, Bo Zhang¹ (1. University of Electronic Science and Technology of China(China), 2. China Academy of Engineering Physics(China), 3. Nanjing Electronic Device Institute(China))

1:45 PM - 3:45 PM

[Th-P-38] Comparison of Electric Field Profile and Breakdown Voltage of 1.2 kV 4H-SiC Superjunction DMOSFETs and Conventional DMOSFETs

*Chen-Dong Tzou¹, Jhen-Min Hong¹, Yun-Kai Lai¹, Kung-Yen Lee¹, Chih-Fang Huang² (1. National Taiwan Univ.(Taiwan), 2. National Tsing Hua Univ.(Taiwan))

1:45 PM - 3:45 PM

[Th-P-39] Investigating the Limit of On-Resistance and Breakdown Voltage of Silicon Carbide Power Transistors

*Johanna Mueting¹, Ulrike Grossner¹ (1. ETH Zurich(Switzerland))

1:45 PM - 3:45 PM

[Th-P-40] Physical Simulations and Measurements of 10 kV 4H-SiC PiN Diodes

*K. Elgammal¹, Kai Tian², Lasse Vines³, Marianne E. Bathen³, Wlodek Kaplan⁵, Adolf Schöner⁵, Robin Karhu⁴, Jawad Ul-Hassan⁴, Jinghua Xia⁶, Anders Hallen¹ (1. Royal Institute of Technology, KTH(Sweden), 2. Xi'an Jiatong Univ.(China), 3. Univ. of Oslo(Norway), 4. Linkoping Univ.(Sweden), 5. Ascatron AB(Sweden), 6. GEIRI Co Ltd.(China))

1:45 PM - 3:45 PM

[Th-P-41] Short Circuit Ruggedness of 600 V SiC Trench JFETs

*Vinoth Kumar Sundaramoorthy¹, Lukas Kranz¹, Stephan Wirths¹, Marco Bellini¹, Gianpaolo Romano¹, Enea Bianda¹, Lars Knoll¹, Andrei Mihaila¹ (1. ABB Switzerland Ltd(Switzerland))

1:45 PM - 3:45 PM

[Th-P-42] Effects of Pulsed and DC Body Diode Current Stress on the Stability of 1200-V SiC MOSFET I-V Characteristics

*Ronald Green Green¹, Aivars J Lelis¹, Franklin L Nouketcha^1,2 (1. U.S. Army Research Laboratory(United States of America), 2. University of Maryland(United States of America))

1:45 PM - 3:45 PM

[Th-P-43] Radiation Hardness of 4H-SiC JFETs in MGy Dose Ranges

*Akinori Takeyama¹, Keigo Shimizu², Takahiro Makino¹, Yuichi Yamazaki¹, Shin-ichiro Kuroki³, Yasunori Tanaka², Takeshi Ohshima¹ (1. QST(Japan), 2. AIST(Japan), 3. Hiroshima Univ.(Japan))

1:45 PM - 3:45 PM

[Th-P-44] 4H-SiC Pixel Device with UV Photodiode and MOSFETs for Radiation-Hardened UV Image Sensors

*Kenta Nishigaito¹, Tatsuya Meguro¹, Akinori Takeyama², Takeshi Ohshima², Yasunori Tanaka³, Shin-ichiro Kuroki¹ (1. Research Institute for Nanodevice and Bio Systems, Hiroshima Univ.(Japan), 2. National Institutes for Quantum and Radiological Science and Technology (Japan), 3. National Institute of Advanced Industrial Science and Technology (Japan))

1:45 PM - 3:45 PM

[Th-P-45] Systematic analysis and optimization of Silicon Carbide ultra-thin (<2um) x-ray sensors for synchrotrons beam position monitors applications

*Maria Carulla¹, Selam Nida², Alexander tsibizov², Thomas Ziemann², Mario Birri¹, Beat Meyer¹, Daniel Grolimund¹, Claude Pradervand¹, Oliver Bunk¹, Ulrike Grossner², Massimo Camarda Camarda¹ (1. Paul Scherrer Inst.(Switzerland), 2. ETH Zurich, Advance Power Semiconductor Lab.(Switzerland))

1:45 PM - 3:45 PM

[Th-P-46] Development of a Pulsed Power Supply Utilizing 13 kV Class SiC-MOSFETs

*Katsuya Okamura¹, Fujio Naito^1,2, Ken Takayama¹, Hidenori Kitai³, Hisato Michikoshi³, Kunihiro Sakamoto³, Akira Tokuchi⁴, Tatsuya Kaito⁵, Daiki Kumamoto⁶ (1. KEK(Japan), 2. J-PARC(Japan), 3. AIST(Japan), 4. Pulsed Power Japan Lab.(Japan), 5. Chiba Inst. of Tech.(Japan), 6. Nagaoka Univ. of Tech(Japan))

1:45 PM - 3:45 PM

[Th-P-47] Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETs

*Peter Alexandrov¹, Matt O'Grady¹ (1. United Silicon Carbide, Inc.(United States of America))

1:45 PM - 3:45 PM

[Th-P-48] High-Performance Temperature Sensors Based on Dual 4H-SiC JBS Devices

Ngoc Thi Nguyen¹, Seong Ji Min¹, *Sang Mo Koo¹ (1. Kwangwoon University(Korea))

1:45 PM - 3:45 PM

[Th-P-49LN] Development of 150-mm 4H-SiC Substrates using a High-temperature Chemical Vapor Deposition Method

*Takeshi Okamoto¹, Takahiro Kanda¹, Yuichiro Tokuda¹, Nobuyuki Ohya¹, Kiyoshi Betsuyaku², Norihiro Hoshino², Isaho Kamata², Hidekazu Tsuchida² (1. DENSO CORP.(Japan), 2. CRIEPI(Japan))

1:45 PM - 3:45 PM

[Th-P-50LN] Design, Synthesis and Characterization of Ultralightweight Three Dimensional SiC/SiC Composites

*Sakineh Chabi¹, Yanqiu Zhu² (1. The University of New Mexico(United States of America), 2. University of Exeter(UK))

1:45 PM - 3:45 PM

[Th-P-51LN] Nondestructive depth distribution measurements of carrier lifetime in 4H-SiC thick epitaxial layers with high spatial resolution

*Takashi Hirayama¹, Keisuke Nagaya¹, Akira Miyasaka², Kazutoshi Kojima³, Tomohisa Kato³, Hajime Okumura³, Masashi Kato¹ (1. Nagoya Inst.(Japan), 2. Showa Denko(Japan), 3. AIST(Japan))

1:45 PM - 3:45 PM

[Th-P-52LN] Accurate Channel Mobility Extraction and Scattering Mechanisms in 4H-SiC p-Channel MOSFETs

*XINGYAN ZHOU¹, Dai Okamoto¹, Xufang Zhang¹, Mitsuru Sometani², Mitsuo Okamoto², Shinsuke Harada², Noriyuki Iwamuro¹, Hirosi Yano¹ (1. Tsukuba Univ.(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))

1:45 PM - 3:45 PM

[Th-P-53LN] Surface treatment of 4H-SiC MOSFETs prior to Al₂O₃deposition

*Muhammad Idzdihar Idris¹, A. B. Horsfall² (1. Univ. Teknikal Malaysia Melaka(Malaysia), 2. Newcastle Univ.(UK))

1:45 PM - 3:45 PM

[Th-P-54LN] A Subcircuit SPICE Model for SiC Charge-Balanced Schottky Diodes

*Collin W. Hitchcock¹, Xiang Zhou¹, Gyanesh Pandey¹, Reza Ghandi², Alexander Bolotnikov², T. Paul Chow¹ (1. Rensselaer Polytechnic Institute(United States of America), 2. GE Global Research(United States of America))

1:45 PM - 3:45 PM

[Th-P-55LN] Parameter Spread and its Effect on Lifetime in Discrete SiC MOSFETs

*Thomas Ziemann¹, Joni Jormanainen², Elena Mengotti³, Ulrike Grossner¹ (1. Advanced Power Semiconductor Laboratory, ETH Zurich(Switzerland), 2. ABB Oy(Finland), 3. ABB Schweiz AG(Switzerland))

Session information

[Th-P] Poster Presentation

Authentication