Schedule 2 1:45 PM - 3:45 PM [Th-P-36] Analysis of the static characteristics of 4H-SiC Trench MOSFET with novel trench bottom structure *Hyoung Woo Kim1, Ogyun Seok1, Jeong Hyun Moon1, Wook Bahng1 (1. Korea Electrotechnology Research Institute(Korea))
