[Th-P] Poster Presentation

[Th-P-49LN] Development of 150-mm 4H-SiC Substrates using a High-temperature Chemical Vapor Deposition Method

*Takeshi Okamoto¹, Takahiro Kanda¹, Yuichiro Tokuda¹, Nobuyuki Ohya¹, Kiyoshi Betsuyaku², Norihiro Hoshino², Isaho Kamata², Hidekazu Tsuchida² (1. DENSO CORP.(Japan), 2. CRIEPI(Japan))