Thu. Oct 3, 2019 1:45 PM - 3:45 PMAnnex Hall 1 (Kyoto International Conference Center)
Schedule
2
1:45 PM - 3:45 PM
[Th-P-31] Effect of phosphorus doped poly annealing on threshold voltage stability and thermal oxide reliability in 4H-SiC MOSFET
*Kwangwon Lee1, Youngho Seo1, Taeseop Lee1, Kyeongseok Park1, Martin Domeij2, Fredrik Allerstam2, Thomas Neyer3(1. ON semiconductor(Korea), 2. ON semiconductor (Sweden), 3. ON semiconductor (Germany))