[Th-P] Poster Presentation

[Th-P-32] Rapid Growth of SiO₂ on SiC with Atomically Flat Interface and Low D_it using High Pressure Microwave Oxygen Plasma

*Shengkai Wang^1,2, Jilong Hao^1,2, Nannan You^1,2, Yun Bai^1,2, Xinyu Liu^1,2 (1. Inst. of Microelectronics of Chinese Academy of Sciences(China), 2. Univ. of Chinese Academy of Sciences(China))