ICSCRM2019

講演情報

印刷

Oral Presentation

Power and High-Frequency Devices

[Tu-2A] MOSFETs II

2019年10月1日(火) 10:45 〜 12:15 Room A (Kyoto International Conference Center)

12:00 〜 12:15

[Tu-2A-05] Superior turn-on loss characteristics of 1.2 kV SiC IE-UMOSFET with a very short channel length.

*Taiga Kanamori1, Ruito Aiba1, Masataka Okawa1, Shinsuke Harada2, Hiroshi Yano1, Noriyuki Iwamuro1 (1. Univ. of Tsukuba(Japan), 2. National Inst. of Advanced Indus. Sci. and Tech.(Japan))