ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

2019年10月1日(火) 13:45 〜 15:45 Room A (Kyoto International Conference Center)

14:15 〜 14:30

[Tu-3A-02] Calculation of mobility and localized-state density at SiO2/SiC interface with random fluctuation

*Hironori Yoshioka1 (1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan))