ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

Tue. Oct 1, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

2:15 PM - 2:30 PM

[Tu-3A-02] Calculation of mobility and localized-state density at SiO2/SiC interface with random fluctuation

*Hironori Yoshioka1 (1. National Institute of Advanced Industrial Science and Technology (AIST)(Japan))