Presentation information

Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

Tue. Oct 1, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

2:30 PM - 2:45 PM

[Tu-3A-03] Depth-Resolved Analysis of the SiO₂/4H-SiC Interface using Low-Energy Muons

*Judith Woerle^1,2, Thomas Prokscha², Ulrike Grossner¹ (1. ETH Zurich(Switzerland), 2. Paul Scherrer Institute(Switzerland))