講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

2019年10月1日(火) 13:45 〜 15:45 Room A (Kyoto International Conference Center)

14:30 〜 14:45

[Tu-3A-03] Depth-Resolved Analysis of the SiO₂/4H-SiC Interface using Low-Energy Muons

*Judith Woerle^1,2, Thomas Prokscha², Ulrike Grossner¹ (1. ETH Zurich(Switzerland), 2. Paul Scherrer Institute(Switzerland))