ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

Tue. Oct 1, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

2:45 PM - 3:00 PM

[Tu-3A-04] Evidence of a Transition Layer at the SiO2 / 4H-SiC MOS Interface from AC Conductance Data

*James A Cooper1 (1. Sonrisa Research, Inc. and Purdue University(United States of America))