ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

2019年10月1日(火) 13:45 〜 15:45 Room A (Kyoto International Conference Center)

14:45 〜 15:00

[Tu-3A-04] Evidence of a Transition Layer at the SiO2 / 4H-SiC MOS Interface from AC Conductance Data

*James A Cooper1 (1. Sonrisa Research, Inc. and Purdue University(United States of America))