ICSCRM2019

講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

2019年10月1日(火) 13:45 〜 15:45 Room A (Kyoto International Conference Center)

15:00 〜 15:15

[Tu-3A-05] Influence of non-uniform interface defect distribution on channel mobility in SiC MOSFETs investigated by local deep level transient spectroscopy and device simulation

*Kohei Yamasue1, Yuji Yamagishi1, Yasuo Cho1 (1. Tohoku Univ.(Japan))