ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

Tue. Oct 1, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

3:15 PM - 3:30 PM

[Tu-3A-06] Profiling with Depth Resolution of Sub-nm for SiO2/SiC Interface by Dual-beam TOF-SIMS Combined with Simulation

*Junichiro Sameshima1, Aya Takenaka1, Yuichi Muraji1, Yoshihiko Nakata1, Masanobu Yoshikawa1, Katsumasa Suganuma2 (1. Toray Research Center, Inc.(Japan), 2. Osaka Univ.(Japan))