ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

Tue. Oct 1, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

3:30 PM - 3:45 PM

[Tu-3A-07LN] Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides

*Xufang Zhang1, Dai Okamoto1, Mitsuru Sometani2, Shinsuke Harada2, Noriyuki Iwamuro1, Hiroshi Yano1 (1. Tsukuba Univ.(Japan), 2. AIST(Japan))