ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[Tu-3A] Transition Layer & Fluctuations

2019年10月1日(火) 13:45 〜 15:45 Room A (Kyoto International Conference Center)

15:30 〜 15:45

[Tu-3A-07LN] Different Behaviors of Interface Traps for p-type 4H-SiC MOS Capacitors with Wet and Nitrided Gate Oxides

*Xufang Zhang1, Dai Okamoto1, Mitsuru Sometani2, Shinsuke Harada2, Noriyuki Iwamuro1, Hiroshi Yano1 (1. Tsukuba Univ.(Japan), 2. AIST(Japan))