[Tu-3B] Quantum Technology II

[Tu-3B-05] Coherent Electrical Readout of Spin-Active Defects in 4H-SiC for Quantum Sensors using Photo-Ionization at Ambient Conditions

*Matthias Niethammer¹, Matthias Widmann¹, Torsten Rendler¹, Naoya Morioka¹, Yu Chen Chen¹, Rainer Stöhr¹, Jawad al Hassan², Shinobu Onoda⁶, Takeshi Ohshima⁶, Sang-Yun Lee³, Amlan Mukherjee¹, Junichi Isoya⁴, Nguyen Tien Son², Jörg Wrachtrup^1,5 (1. 3rd Inst. of Physics and Center for Applied Quantum Tech., Univ. of Stuttgart(Germany), 2. Department of Physics, Chemistry and Biology, Linköping Univ.(Sweden), 3. Center for Quantum Info., Korea Inst. of Sci. and Tech. Seoul(Korea), 4. Faculty of Pure and Applied Sci., Univ. of Tsukuba(Japan), 5. Max Planck Inst. for Solid State Res., Stuttgart(Germany), 6. National Inst. for Quantum and Radiological Sci. and Tech.(Japan))