[Tu-P] Poster Presentation

[Tu-P-33] The Ohmic Contact Characteristics of 4H-SiC Power Devices by Plused Laser Annealing and Rapid Thermal Annealing

Ziwei Zhou¹, Jianyong Hao¹, Jun Sun¹, *Zhenzhong Zhang¹, Weiwei He¹, Zedong Zheng² (1. Shenzhen BASiC Semiconductor Ltd.(China), 2. Department of Electrical Engineering, Tsinghua University(China))