ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[We-1A] Interface Defect Structures

Wed. Oct 2, 2019 8:45 AM - 10:15 AM Room A (Kyoto International Conference Center)

8:45 AM - 9:00 AM

[We-1A-01] Systematic investigation of carbon-related defects in SiC (0001)/SiO2 systems: A hybrid density functional study

*Takuma Kobayashi1, Yu-ichiro Matsushita1 (1. Tokyo Inst. of Tech.(Japan))