ICSCRM2019

講演情報

Oral Presentation

MOS Gate Stacks and Device Processing

[We-1A] Interface Defect Structures

2019年10月2日(水) 08:45 〜 10:15 Room A (Kyoto International Conference Center)

08:45 〜 09:00

[We-1A-01] Systematic investigation of carbon-related defects in SiC (0001)/SiO2 systems: A hybrid density functional study

*Takuma Kobayashi1, Yu-ichiro Matsushita1 (1. Tokyo Inst. of Tech.(Japan))