ICSCRM2019

講演情報

印刷

Oral Presentation

MOS Gate Stacks and Device Processing

[We-1A] Interface Defect Structures

2019年10月2日(水) 08:45 〜 10:15 Room A (Kyoto International Conference Center)

09:00 〜 09:15

[We-1A-02] The PbC (carbon dangling bond) center at 4H-SiC(0001)/SiO2 interface: An EDMR study

*Takahide Umeda1, Takuma Kobayashi2, Yu-ichro Matsushita2, Eito Higa1, Hiroshi Yano1, Mitsuru Sometani3, Shinsuke Harada3 (1. Univ. of Tsukuba(Japan), 2. Tokyo Inst. of Tech.(Japan), 3. AIST(Japan))