ICSCRM2019

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Oral Presentation

Packaging and Applications

[We-1B] High Temperature and IC

Wed. Oct 2, 2019 8:45 AM - 10:15 AM Annex Hall 2 (Kyoto International Conference Center)

9:45 AM - 10:00 AM

[We-1B-04] 4H-SiC RESURF n-LDMOS transistor in high voltage integrated circuits

*Julietta Weisse1, Christian Matthus2, Heinz Mitlehner2, Tobias Erlbacher2 (1. Friedrich-Alexander-University Erlangen-Nuremberg(Germany), 2. Fraunhofer Institute of Integrated Systems and Device Technology(Germany))