ICSCRM2019

講演情報

印刷

Oral Presentation

Packaging and Applications

[We-1B] High Temperature and IC

2019年10月2日(水) 08:45 〜 10:15 Annex Hall 2 (Kyoto International Conference Center)

09:45 〜 10:00

[We-1B-04] 4H-SiC RESURF n-LDMOS transistor in high voltage integrated circuits

*Julietta Weisse1, Christian Matthus2, Heinz Mitlehner2, Tobias Erlbacher2 (1. Friedrich-Alexander-University Erlangen-Nuremberg(Germany), 2. Fraunhofer Institute of Integrated Systems and Device Technology(Germany))