ICSCRM2019

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Oral Presentation

MOS Gate Stacks and Device Processing

[We-2A] Inversion Layer Transport

Wed. Oct 2, 2019 10:45 AM - 12:15 PM Room A (Kyoto International Conference Center)

10:45 AM - 11:15 AM

[We-2A-01(Invited)] Improvement of channel characteristics of SiC MOSFETs by sulfur doping based on newly-developed carrier transport model

*Munetaka Noguchi1, Toshiaki Iwamatsu1, Hiroyuki Amishiro1, Hiroshi Watanabe1, Koji Kita2, Naruhisa Miura1 (1. Advanced Technology R & D Center, Mitsubishi Electric Corporation(Japan), 2. Department of Materials Engineering, The University of Tokyo(Japan))