Independent Elimination of Traps and Scattering Centers by NO Annealing in 4H-SiC (11-20) a-face MOS Characterized by Hall Effect Measurement

Presentation information

Oral Presentation

MOS Gate Stacks and Device Processing

Wed. Oct 2, 2019 10:45 AM - 12:15 PM Room A (Kyoto International Conference Center)

11:45 AM - 12:00 PM

*Hirohisa Hirai¹, Tetsuo Hatakeyama¹, Mitsuru Sometani¹, Mitsuo Okamoto¹, Shinsuke Harada¹, Hajime Okumura¹ (1. AIST(Japan))