ICSCRM2019

Presentation information

Print

Oral Presentation

Power and High-Frequency Devices

[We-3A] Diodes and Processing

Wed. Oct 2, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

1:45 PM - 2:00 PM

[We-3A-01] Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction

*Dionysios Stefanakis1, Xilun Chi1, Takuya Maeda1, Mitsuaki Kaneko1, Tsunenobu Kimoto 1 (1. Kyoto University(Japan))