ICSCRM2019

Presentation information

Print

Oral Presentation

Power and High-Frequency Devices

[We-3A] Diodes and Processing

Wed. Oct 2, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

2:00 PM - 2:15 PM

[We-3A-02] Forward Thermionic Field Emission Current and Barrier Height Lowering in Heavily-Doped 4H-SiC Schottky Barrier Diodes

*Masahiro Hara1, Satoshi Asada1, Takuya Maeda1, Tsunenobu Kimoto1 (1. Kyoto Univ.(Japan))