ICSCRM2019

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Oral Presentation

Power and High-Frequency Devices

[We-3A] Diodes and Processing

Wed. Oct 2, 2019 1:45 PM - 3:45 PM Room A (Kyoto International Conference Center)

2:15 PM - 2:30 PM

[We-3A-03] Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes

*Xiang Zhou1, Collin W. Hitchcock1, Reza Ghandi2, Alex Bolotnikov2, T. Paul Chow1 (1. Rensselaer Polytechnic Institute (RPI)(United States of America), 2. General Electric Global Research Center(United States of America))