[We-3A] Diodes and Processing

[We-3A-01] Temperature Dependence of Impact Ionization Coefficients in 4H-SiC along <11-20> Direction

*Dionysios Stefanakis¹, Xilun Chi¹, Takuya Maeda¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto ¹ (1. Kyoto University(Japan))