[We-3A] Diodes and Processing

[We-3A-03] Dynamic Switching of 3kV 4H-SiC Charge-Balanced Junction Barrier Schottky (JBS) Diodes

*Xiang Zhou¹, Collin W. Hitchcock¹, Reza Ghandi², Alex Bolotnikov², T. Paul Chow¹ (1. Rensselaer Polytechnic Institute (RPI)(United States of America), 2. General Electric Global Research Center(United States of America))