ICSCRM2019

講演情報

印刷

Oral Presentation

Power and High-Frequency Devices

[We-3A] Diodes and Processing

2019年10月2日(水) 13:45 〜 15:45 Room A (Kyoto International Conference Center)

14:30 〜 14:45

[We-3A-04] Photoluminescence analysis of a forward-biased SiC SWITCH-MOS under various stress conditions

*Masakazu Baba1, Yusuke Kobayashi1, Manabu Takei2, Hiroshi Kimura2, Shinsuke Harada1 (1. Advanced Indus. Sci. and Tech.(Japan), 2. Fuji Electric Corp. Ltd.(Japan))