ICSCRM2019

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Oral Presentation

Characterization and Defect Engineering

[We-3B] Fundamental Physics and Measurement Techniques

Wed. Oct 2, 2019 1:45 PM - 3:45 PM Annex Hall 2 (Kyoto International Conference Center)

2:30 PM - 2:45 PM

[We-3B-03] Impacts of High-Temperature Annealing and Thermal Oxidation on Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Grown by HTCVD

*Chansoon Koo1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1. Kyoto Univ.(Japan))