ICSCRM2019

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Oral Presentation

Characterization and Defect Engineering

[We-3B] Fundamental Physics and Measurement Techniques

Wed. Oct 2, 2019 1:45 PM - 3:45 PM Annex Hall 2 (Kyoto International Conference Center)

2:45 PM - 3:00 PM

[We-3B-04] An Isothermal Annealing Study of the EH1 and EH3 Levels in 4H-SiC

*Giovanni Alfieri1, Andrei Mihaila1 (1. ABB(Switzerland))