ICSCRM2019

講演情報

印刷

Oral Presentation

Characterization and Defect Engineering

[We-3B] Fundamental Physics and Measurement Techniques

2019年10月2日(水) 13:45 〜 15:45 Annex Hall 2 (Kyoto International Conference Center)

14:30 〜 14:45

[We-3B-03] Impacts of High-Temperature Annealing and Thermal Oxidation on Electrical Properties of High-Purity Semi-Insulating 4H-SiC Substrates Grown by HTCVD

*Chansoon Koo1, Mitsuaki Kaneko1, Tsunenobu Kimoto1 (1. Kyoto Univ.(Japan))