ICSCRM2019

講演情報

印刷

Oral Presentation

Characterization and Defect Engineering

[We-3B] Fundamental Physics and Measurement Techniques

2019年10月2日(水) 13:45 〜 15:45 Annex Hall 2 (Kyoto International Conference Center)

14:45 〜 15:00

[We-3B-04] An Isothermal Annealing Study of the EH1 and EH3 Levels in 4H-SiC

*Giovanni Alfieri1, Andrei Mihaila1 (1. ABB(Switzerland))