ICSCRM2019

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Oral Presentation

Characterization and Defect Engineering

[We-3B] Fundamental Physics and Measurement Techniques

Wed. Oct 2, 2019 1:45 PM - 3:45 PM Annex Hall 2 (Kyoto International Conference Center)

3:15 PM - 3:30 PM

[We-3B-06] Lifetime limiting substrate originated deep level defects in 4H-SiC epilayers

*Juergen Erlekampf1, Birgit Kallinger1, Mathias Rommel1, Patrick Berwian1, Jochen Friedrich1, Tobias Erlbacher1 (1. Fraunhofer IISB, Schottkystr. 10, 91058 Erlangen(Germany))