The 26th International Display Workshops (IDW '19)

Presentation information

Poster Presentation

[AMDp1] Oxide TFTs

Thu. Nov 28, 2019 10:40 AM - 1:10 PM Main Hall (1F)

10:40 AM - 1:10 PM

[AMDp1-17] Effect of Ambient Atmosphere on Abnormal Degradation Behavior in Metal-Oxide Thin-Film Transistor under Positive Gate-Bias and Temperature Stress

*JIAPENG LI1, Lei Lu2, Zhihe Xia1, Sisi Wang1, Zhichao Zhou1, Runxiao Shi1, Hoi-Sing Kwok3,1, Man Wong1 (1. The Hong Kong University of Science and Technology (Hong Kong), 2. Peking Univeristy (China), 3. Jockey Club Institute for Advanced Study (Hong Kong))

Keywords:Metal-oxide, Thin-Film Transistor, PBTS, Ambient Effect

Positive gate-bias and temperature stress were performed on the respective metal-oxide thin-film transistors as fabricated and stored in air ambiance for three months. An abnormal negative shift of the transfer characteristics was observed, and a channel width-dependence of device degradation occurred after long-term storing.