[AMD5] Oxide TFT: Device Fundamentals

[AMD5-1(Invited)] Switching Characteristic Enhancement of P-type Cu₂O TFTs

Dongwoo Kim¹, I Sak Lee¹, Sujin Jung¹, Sung Min Rho¹, *Hyun Jae Kim¹ (1. Yonsei University (Korea))

キーワード：Oxide TFT, p-type semiconductor, Copper oxide

We propose three methods to enhance switching characteristics of p-type Cu₂O thin film transistors (TFTs) by passivating the copper oxide TFTs with silicon dioxide (SiO₂) using sputtering, oxidizing the back channel of copper oxide with hypochlorous acid (HClO), and doping gallium into the Cu₂O film.