The 26th International Display Workshops (IDW '19)

講演情報

Oral Presentation

[AMD5] Oxide TFT: Device Fundamentals

2019年11月29日(金) 09:00 〜 10:30 Mid-sized Hall B (1F)

Chair: Kazumasa Nomoto (Sony)
Co-Chair: Hideya Kumomi (Tokyo Tech.)

09:25 〜 09:50

[AMD5-2(Invited)] High Mobility Metal-Oxide Devices for Display SoP and 3D Brain-Mimicking IC

*Albert Chin1, Te Jui Yen1, Cheng Wei Shih1, You-Da Chen1 (1. National Chiao Tung University (Taiwan))

キーワード:metal-oxide transistor, monolithic 3D integration, 3D brain-mimicking IC architecture

Owing to fast technology evolution, the n-type SnO2 thin-film transistor (TFT) can reach high mobility of 238 cm2/Vs and p-type SnO TFT has high hole mobility of 7.6 cm2/Vs. These high mobility complementary TFTs is the enabling technology for display system-on-panel and the ultra-fast three-dimensional brain-mimicking IC.