[AMD5] Oxide TFT: Device Fundamentals

[AMD5-2(Invited)] High Mobility Metal-Oxide Devices for Display SoP and 3D Brain-Mimicking IC

*Albert Chin¹, Te Jui Yen¹, Cheng Wei Shih¹, You-Da Chen¹ (1. National Chiao Tung University (Taiwan))

キーワード：metal-oxide transistor, monolithic 3D integration, 3D brain-mimicking IC architecture

Owing to fast technology evolution, the n-type SnO₂ thin-film transistor (TFT) can reach high mobility of 238 cm²/Vs and p-type SnO TFT has high hole mobility of 7.6 cm²/Vs. These high mobility complementary TFTs is the enabling technology for display system-on-panel and the ultra-fast three-dimensional brain-mimicking IC.