[AMD5] Oxide TFT: Device Fundamentals

[AMD5-4] Simulation Study of Self-Heating and Edge Effects on Oxide-Semiconductor TFTs: Channel-Width Dependence

*Katsumi Abe¹, Kazuki Ota¹, Takeshi Kuwagaki¹ (1. Silvaco Japan Co., Ltd. (Japan))

キーワード：Oxide-semiconductor, Thin-film transistor, Self-heating, Edge effect, Device simulation

We studied the channel-width dependence of oxide-semiconductor TFTs via a device simulator. The results show that the ON-current is affected by two factors: self-heating and edge effects. The former increases the current with a rise in temperature, while the latter produces the high edge current-density caused by its strong electric-field.