10:40 AM - 1:10 PM
[AMDp1-15] Effect of Fluorine Doping on Illumination Stability of Solution-Processed IGZO TFTs
Keywords:oxide semiconductor, thin-film transistors, fluorine, a-IGZO, passivation
This study investigated the effect of F doping though NBIS comparison between F-doped and conventional IGZO TFTs. The oxygen vacancies in the IGZO layer were reduced and the bandgap of the IGZO was widened by F doping. As a result of this, the illumination stability of F doped-TFTs was improved.