[Mon-B2] Electronic Materials and Processing

[Mon-B2-4] Polarity Control of Face-to-Face Annealed Sputtered AlN

*Kanako Shojiki^1,2, Kenjiro Uesugi¹, Shiyu Xiao¹, Hideto Miyake¹ (1. Mie Univ. (Japan), 2. Osaka Univ. (Japan))

キーワード：III-nitride semiconductor, AlN, Sputtering, Annealing, TEM