[Mon-B2] Electronic Materials and Processing

[Mon-B2-6] Atomic Structures and Chemical states of Active and Inactive Dopant Sites in Si-doped GaN

*Yoshiyuki Yamashita^1,2, Jingmin Tang^1,2 (1. National Institute for Materials Science, 2. Kyushu University)

キーワード：GaN, PES, dopant, X-ray absorption near-edge structure