[Mon-PO1B] Poster Session (17:30-19:00) Category B

[Mon-PO1B-2] Increased critical thickness of strained SiGe layers on Ge-on-Si(111)

*Youya Wagatsuma¹, Rena Kanesawa¹, Md. Mahfuz Alam^1,2, Kazuya Okada¹, Michihiro Yamada³, Kohei Hamaya³, Kentarou Sawano¹ (1. Advanced Research Laboratories, Tokyo City University (Japan), 2. Department of Physics, University of Barishal (Bangladesh), 3. Center for Spintronics Research Network, Graduate School of Engineering Science (Japan))

キーワード：SiGe, strain, spintronics