日本金属学会2020年秋期(第167回)講演大会

Presentation information

公募シンポジウム講演

[S2] New Materials Science On Nanoscale Structures and Functions of Crystal Defect Cores, I(2)

Fri. Sep 18, 2020 1:20 PM - 4:50 PM Rm. B (ZoomRm.B)

Chair:Masaaki Hirayama Sub Chairman (assistant):

2:20 PM - 2:40 PM

[S2.28] The effect of Ti doping on the atomic and electronic structures in Al2O3 Σ7 grain boundaries

*Chuchu YANG1, Bin FENG1, Jiake WEI1,2, Eita TOCHIGI1,3, Saki ISHIHARA1, Naoya SHIBATA1,4, Yuichi IKUHARA1,2,4 (1. Univ. of Tokyo, 2. Kyoto University, 3. PRESTO, 4. JFCC)

Keywords:Alumina、Grain boundary、Segregation、STEM

In this study, the atomic and electronic band structures for two Al2O3 model GBs (Σ7{4-510 } and Σ7{2-310}) doped with Ti were characterized by using atom-resolved STEM, EDS and EELS.

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