[S2] New Materials Science On Nanoscale Structures and Functions of Crystal Defect Cores, I(2)

[S2.28] The effect of Ti doping on the atomic and electronic structures in Al₂O₃ Σ7 grain boundaries

*Chuchu YANG¹, Bin FENG¹, Jiake WEI^1,2, Eita TOCHIGI^1,3, Saki ISHIHARA¹, Naoya SHIBATA^1,4, Yuichi IKUHARA^1,2,4 (1. Univ. of Tokyo, 2. Kyoto University, 3. PRESTO, 4. JFCC)

Keywords:Alumina、Grain boundary、Segregation、STEM

In this study, the atomic and electronic band structures for two Al₂O₃ model GBs (Σ7{4-510 } and Σ7{2-310}) doped with Ti were characterized by using atom-resolved STEM, EDS and EELS.